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Data Sheet, Rev. 0.5, Dec. 2003 HYS64D64020HDL-5-B HYS64D64020HDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Green Product Memory Products Never stop thinking. Edition 2003-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet, Rev. 0.5, Dec. 2003 HYS64D64020HDL-5-B HYS64D64020HDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products Never stop thinking. HYS64D64020HDL-5-B, HYS64D64020HDL-6-B, Revision History: Previous Version: Page Subjects (major changes since last revision) Rev. 0.5 2003-12 2003-03 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: techdoc.mp@infineon.com Template: mp_a4_v2.0_2003-06-06.fm HYS64D64020HDL-[6/7]-B Small Outline DDR SDRAM Modules Table of Contents 1 1.1 1.2 2 3 3.1 3.2 3.3 4 5 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Specification and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 14 16 SPD Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Data Sheet PR E- RE LE 5 AS E V0.5, 2003-08 CO PY 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM HYS64D64020HDL-5-B HYS64D64020HDL-6-B 1 1.1 * * * * * * * * * * * * * Overview Features Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules Two ranks 64M x 64 organization JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM) Single +2.5 V ( 0.2 V) power supply Built with 512 Mbit DDR SDRAMs organised as x16 in P-TSOPII-66 packages Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh All inputs and outputs SSTL_2 compatible Serial Presence Detect with E2PROM Jedec standard form factor: 67.60 mm x 31.75 mm x 3.00 mm Jedec standard reference layout Raw Cards A DDR400 speed grade supported Gold plated contacts Performance -5 DDR400B PC3200-3033 -6 DDR333B PC2700-2533 166 166 133 Unit -- -- MHz MHz MHz Component Module @CL3 @CL2.5 @CL2 Table 1 Part Number Speed Code Speed Grade max. Clock Frequency fCK3 fCK2.5 fCK2 200 166 133 1.2 Description The HYS64D64020HDL-5-B and HYS64D64020HDL-6-B are industry standard 200-Pin Small Outline Dual-In-Line Memory Modules (SO-DIMMs) organized as 64M x 64. The memory array is designed with Double Data Rate Synchronous DRAMs (DDR SDRAM). A variety of decoupling capacitors are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. Data Sheet 6 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Overview Table 2 Type PC2700 (CL=2.5) HYS64D64020HDL-5-B HYS64D64020HDL-6-B Notes 1. All part numbers end with a place code designating the silicon-die revision. Reference information available on request. Example: HYS64D64020HDL-5-B, indicating rev. B dies are used for SDRAM components. 2. The Compliance Code is printed on the module labels describing the speed sort (for example "PC2700"), the latencies and SPD code definition (for example "2033-0" means CAS latency of 2.0 clocks, RCD1) latency of 3 clocks, Row Precharge latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card used for this module. PC2100S-2033-0-A1 PC2700S-2533-0-A1 two ranks 512MB SO-DIMM two ranks 512MB SO-DIMM 512 MB (x16) 512 MB(x16) Ordering Information Compliance Code Description SDRAM Technology 1) RCD: Row-Column-Delay Data Sheet 7 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Pin Configuration 2 Table 3 Symbol A0 - A12 BA0, BA1 DQ0 - DQ63 Pin Configuration Pin Definitions and Functions Type1) I I I/O I I I/O I I I I PWR GND PWR PWR AI PWR I I/O I NC NU Function Address Inputs Bank Address Data Input/Output Command Input Clock Enable SDRAM Data Strobe SDRAM Clock (true signal) SDRAM Clock (complementary signal) Data Mask Chip Select Power (+ 2.5 V) Ground I/O Driver power supply VDD Indentification flag I/O reference supply Serial EEPROM power supply Serial bus clock Serial bus data line slave address select Not Connected Not Usable, reserved for future use RAS, CAS, WE CKE0 - CKE1 DQS0 - DQS7 CK0 - CK1, CK0 - CK1 DM0 - DM8 S0, S1 VDD VSS VDDQ VDDID VREF VDDSPD SCL SDA SA0 - SA2 NC NU 2) 1) I: Input; O: Output; I/O: bidirectional In-/Output; AI: Analog Input; PWR: Power Supply; GND: Signal Ground; NC: Not Connected; NU: Not Usable 2) CKE1 and S1 are used on two bank modules only Data Sheet 8 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Pin Configuration Table 4 Front side Pin # 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 Symbol Pin Configuration Back side Pin # 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Key 41 43 45 47 49 51 53 55 57 59 61 63 DQ16 DQ17 42 44 46 48 50 52 54 56 58 60 62 64 DQ20 DQ21 Symbol Front side Pin # 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 Symbol DQ26 DQ27 Back side Pin # 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 Symbol DQ30 DQ31 Front side Pin # 133 135 137 139 141 143 145 147 149 151 153 155 157 159 161 163 165 167 169 171 173 175 177 179 181 183 185 187 189 191 193 195 197 199 Symbol DQS4 DQ34 Back side Pin # 134 136 138 140 142 144 146 148 150 152 154 156 158 160 162 164 166 168 170 172 174 176 178 180 182 184 186 188 190 192 194 196 198 200 Symbol DM4 DQ38 VREF VSS DQ0 DQ1 VREF VSS DQ4 DQ5 VDD (CB0) (CB1) VDD (CB4) (CB5) VSS DQ35 DQ40 VSS DQ39 DQ44 VDD DQS0 DQ2 VDD DM0 DQ6 VSS (DQS8) (CB2) VSS (DM8) (CB6) VDD DQ41 DQS5 VDD DQ45 DM5 VSS DQ3 DQ8 VSS DQ7 DQ12 VDD (CB3) DU VDD (CB7) DU VSS DQ42 DQ43 VSS DQ46 DQ47 VDD DQ9 DQS1 VDD DQ13 DM1 VSS (CK2) (CK2) VSS DQ10 DQ11 VSS DQ14 DQ15 VDD CKE1 DU A12 A9 VSS VSS VDD VDD CKE0 DU A11 A8 VDD VDD VSS VSS DQ48 DQ49 VDD CK1 CK1 VSS DQ52 DQ53 VDD CK0 CK0 VSS VDD VDD VSS VSS VDD DQS6 DQ50 VDD DM6 DQ54 VSS A7 A5 A3 A1 VSS A6 A4 A2 A0 VSS DQ51 DQ56 VSS DQ55 DQ60 VDD DQ57 DQS7 VDD DQ61 DM7 VDD DQS2 DQ18 VDD DM2 DQ22 VDD A10/AP BA0 WE S0 DU VDD BA1 RAS CAS S1 DU VSS DQ58 DQ59 VSS DQ62 DQ63 VSS DQ19 DQ24 VSS DQ23 DQ28 VDD SDA SCL VDD SA0 SA1 SA2 DU VDD DQ25 DQS3 VDD DQ29 DM3 VSS DQ32 DQ33 VSS DQ36 DQ37 VSS VSS VDD VDD VDDSPD VDDID Note: Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84, 89 and 91 are reserved for x72 variants of this module and are not used on the x64 versions. Pin 86 is reserved for a registered variant of this module and is not used on the unbuffered version Data Sheet 9 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Pin Configuration Table 5 Density 512MB Address Format Organization 64M x64 Memory Ranks 2 SDRAMs 32M x16 # of SDRAMs 8 # of row/bank/ columns bits 13/2/10 Refresh 8K Period 64 ms Interval 7.8 s pin 40 pin 42 back side Figure 1 Pin Configuration Data Sheet 10 pin 200 pin 2 pin 199 pin 39 pin 41 front side pin 1 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Pin Configuration S1 S0 S S LDQ S LDM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 D4 5 6 7 S S LDQ S LDM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 D6 6 7 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 LDQS LDM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 D0 6 7 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 LDQS LDM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 D2 6 7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 UDQ S UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 UDQ S UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 S LDQ S LD M I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 S LDQS LD M I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 D5 5 6 7 S S LDQS LD M DQS6 DM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 LDQS LD M D1 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 D3 6 7 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 D7 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 UDQ S UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS7 DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U DQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 Serial Presence Detect (SPD) SCL SA0 SA1 SA2 A0 A1 A2 WP SDA #Unless otherwise noted, resistor values are 22 5% BA0-BA1 A0-An RAS CAS WE CKE0 CKE1 VDDSPD VREF VDD VSS VDDID SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D3 SDRAMS D4-D7 SPD SDRAMS D0-D7 SDRAMS D0-D7 VDD and VDDQ SDRAMS D0-D7, SPD CK0 CK0 CK1 CK1 CK2 CK2 4 loads 4 loads 0 loads Note: DQ wiring may differ from that described in this drawing; however DQ/DM/DQS relationships are maintained as shown. VDDID strap connections: (for memory device VDD, VDDQ) Strap out (open): VDD = VDDQ Strap in (closed): VDD VDDQ Figure 2 Block Diagram - Two Ranks 64M x 64 DDR SDRAM SO-DIMM HYS64D64020HDL-[5/6]-B Data Sheet 11 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics 3 3.1 Table 6 Parameter Electrical Characteristics Operating Conditions Absolute Maximum Ratings Symbol min. Values typ. - - - - - - 1 50 max. Unit Note/ Test Condition V V V V C C W mA - - - - - - - - Voltage on I/O pins relative to VSS Voltage on inputs relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Operating temperature (ambient) Storage temperature (plastic) Power dissipation (per SDRAM component) Short circuit output current VIN, VOUT -0.5 VIN VDD VDDQ TA TSTG PD IOUT -1 -1 -1 0 -55 - - VDDQ + 0.5 +3.6 +3.6 +3.6 +70 +150 - - Attention: Permanent damage to the device may occur if "Absolute Maximum Ratings" are exceeded. This is a stress rating only, and functional operation should be restricted to recommended operation conditions. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit. Table 7 Parameter Device Supply Voltage Electrical Characteristics and DC Operating Conditions Symbol Min. 2.3 2.5 2.3 2.5 2.3 0 0.49 x 0.5 x Values Typ. 2.5 2.6 2.5 2.6 2.5 Max. 2.7 2.7 2.7 2.7 3.6 0 0.51 x V V V V V V V Unit Note/Test Condition 1) VDD Device Supply Voltage VDD Output Supply Voltage VDDQ Output Supply Voltage VDDQ EEPROM supply voltage VDDSPD Supply Voltage, I/O Supply VSS, Voltage VSSQ Input Reference Voltage VREF I/O Termination Voltage (System) fCK 166 MHz fCK > 166 MHz 2) fCK 166 MHz 3) fCK > 166 MHz 2)3) -- -- 4) VTT VDDQ VDDQ VREF - 0.04 VREF + 0.15 -0.3 -0.3 0.36 0.71 VDDQ VREF + 0.04 V VDDQ + 0.3 V VREF - 0.15 V VDDQ + 0.3 V VDDQ + 0.6 V 1.4 -- 5) Input High (Logic1) Voltage VIH(DC) Input Low (Logic0) Voltage VIL(DC) Input Voltage Level, CK and CK Inputs Input Differential Voltage, CK and CK Inputs VI-Matching Pull-up Current to Pull-down Current 8) 8) 8) VIN(DC) VID(DC) VIRatio 8)6) 7) Data Sheet 12 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics Table 7 Parameter Input Leakage Current Electrical Characteristics and DC Operating Conditions (cont'd) Symbol Min. Values Typ. Max. 2 A Any input 0 V VIN VDD; All other pins not under test = 0 V 8)9) DQs are disabled; 0 V VOUT VDDQ 8) -2 Unit Note/Test Condition 1) II Output Leakage Current Output High Current, Normal Strength Driver Output Low Current, Normal Strength Driver 1) 0 C TA 70 C IOZ IOH IOL -5 -- 16.2 5 -16.2 -- A mA mA VOUT = 1.95 V 8) VOUT = 0.35 V 8) 2) DDR400 conditions apply for all clock frequencies above 166 MHz 3) Under all conditions, VDDQ must be less than or equal to VDD. 4) Peak to peak AC noise on VREF may not exceed 2% VREF (DC). VREF is also expected to track noise variations in VDDQ. 5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 6) VID is the magnitude of the difference between the input level on CK and the input level on CK. 7) The ration of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. 8) Inputs are not recognized as valid until VREF stabilizes. 9) Values are shown per DDR SDRAM component Data Sheet 13 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics 3.2 Table 8 Parameter Current Specification and Conditions IDD Conditions Symbol Operating Current 0 one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. Operating Current 1 one bank; active/read/precharge; Burst Length = 4; see component data sheet. Precharge Power-Down Standby Current all banks idle; power-down mode; CKE VIL,MAX Precharge Floating Standby Current CS VIH,,MIN, all banks idle; CKE VIH,MIN; address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM. Precharge Quiet Standby Current CS VIHMIN, all banks idle; CKE VIH,MIN; VIN = VREF for DQ, DQS and DM; address and other control inputs stable at VIH,MIN or VIL,MAX. Active Power-Down Standby Current one bank active; power-down mode; CKE VILMAX; VIN = VREF for DQ, DQS and DM. Active Standby Current one bank active; CS VIH,MIN; CKE VIH,MIN; tRC = tRAS,MAX; DQ, DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle. Operating Current Read one bank active; Burst Length = 2; reads; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA Operating Current Write one bank active; Burst Length = 2; writes; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B Auto-Refresh Current tRC = tRFCMIN, burst refresh Self-Refresh Current CKE 0.2 V; external clock on Operating Current 7 four bank interleaving with Burst Length = 4; see component data sheet. IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7 Data Sheet 14 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics Table 9 IDD Specification HYS64D64020HDL-6-B HYS64D64020HDL-5-B Unit Note 1)2) Part Number & Organization 512MB x64 2 Ranks -6 typ 508 568 24 200 136 88 296 568 588 1020 13 1240 max 616 676 32 240 192 120 352 676 696 1224 14 1464 512MB x64 2 Ranks -6 typ 548 608 32 240 920 96 296 628 648 1128 16 1528 max 656 736 40 288 208 128 352 756 776 1356 16 1816 mA mA mA mA mA mA mA mA mA mA mA mA 3) 3)4) 5) 5) 5) 5) 5) 3)4) 3) 3) 5) 3)4) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7 1) Module IDD values are calculated on the basis of component IDD and can be measured differently according to DQ loading capacity. 2) Test condition for maximum values: VDD = 2.7 V, TA = 10 C 3) The module IDDx values are calculated from the IDDx values of the component data sheet as follows: m x IDDx[component] + n x IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules 4) DQ I/O (IDDQ) currents are not included in the calculations (see note 1) 5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) x IDDx[component] Data Sheet 15 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics 3.3 Table 10 Parameter AC Characteristics AC Timing - Absolute Specifications -6/-5 Symbol Min. -6 DDR333 Max. +0.7 +0.6 0.55 0.55 12 12 12 -- -- -- -- +0.7 +0.7 1.25 +0.45 +0.55 -- -- -- -- -- -- 0.60 -- Min. -0.6 -0.5 0.45 0.45 5 6 7.5 0.4 0.4 2.2 1.75 -0.6 -0.6 0.75 -- -- -5 DDR400B Max. +0.6 +0.5 0.55 0.55 12 12 12 -- -- -- -- +0.6 +0.6 1.25 +0.40 +0.50 -- -- -- -- -- -- 0.60 -- ns ns 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) Unit Note/ Test Condition 1) DQ output access time from CK/CK DQS output access time from CK/CK CK high-level width CK low-level width Clock Half Period Clock cycle time tAC tDQSCK tCH tCL tHP tCK -0.7 -0.6 0.45 0.45 6 6 7.5 tCK tCK ns ns ns ns ns ns ns ns ns ns min. (tCL, tCH) min. (tCL, tCH) CL = 3.0 2)3)4)5) CL = 2.5 2)3)4)5) CL = 2.0 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)6) DQ and DM input hold time DQ and DM input setup time Control and Addr. input pulse width (each input) DQ and DM input pulse width (each input) Data-out high-impedance time from CK/CK tDH tDS tIPW tDIPW tHZ 0.45 0.45 2.2 1.75 -0.7 -0.7 0.75 -- -- 2)3)4)5)6) 2)3)4)5)7) Data-out low-impedance time from CK/ tLZ CK Write command to 1st DQS latching transition DQS-DQ skew (DQS and associated DQ signals) Data hold skew factor DQ/DQS output hold time 2)3)4)5)7) tDQSS tDQSQ tQHS tQH tCK ns ns ns 2)3)4)5) TSOPII 2)3)4)5) TSOPII 2)3)4)5) 2)3)4)5) tHP - tQHS 0.35 0.2 0.2 2 0 0.40 0.25 tHP - tQHS 0.35 0.2 0.2 2 0 0.40 0.25 DQS input low (high) pulse width (write tDQSL,H cycle) DQS falling edge to CK setup time (write cycle) DQS falling edge hold time from CK (write cycle) Write preamble setup time Write postamble Write preamble tCK tCK tCK tCK ns 2)3)4)5) tDSS tDSH 2)3)4)5) 2)3)4)5) Mode register set command cycle time tMRD 2)3)4)5) 2)3)4)5)8) 2)3)4)5)9) 2)3)4)5) tWPRES tWPST tWPRE tCK tCK Data Sheet 16 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics Table 10 Parameter AC Timing - Absolute Specifications -6/-5 (cont'd) Symbol Min. Address and control input setup time -6 DDR333 Max. -- -- Min. 0.6 0.7 -5 DDR400B Max. -- -- ns ns fast slew rate 3)4)5)6)10) Unit Note/ Test Condition 1) tIS 0.75 0.8 slow slew rate 3)4)5)6)10) Address and control input hold time tIH 0.75 0.8 -- -- 0.6 0.7 -- -- ns ns fast slew rate 3)4)5)6)10) slow slew rate 3)4)5)6)10) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) tRPRE Read postamble tRPST Active to Precharge command tRAS Active to Active/Auto-refresh command tRC Read preamble period Auto-refresh to Active/Auto-refresh command period Active to Read or Write delay Precharge command period Active to Autoprecharge delay Active bank A to Active bank B command Write recovery time Auto precharge write recovery + precharge time Internal write to read command delay 0.9 0.40 42 60 72 18 18 18 12 15 1.1 0.60 70E+3 -- -- -- -- -- -- -- 0.9 0.40 40 55 65 15 15 15 10 15 1.1 0.60 70E+3 -- -- -- -- -- -- -- tCK tCK ns ns ns ns ns ns ns ns tRFC tRCD tRP tRAP tRRD tWR tDAL 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)11) tCK 1 75 200 -- -- -- -- 7.8 1 75 200 -- -- -- -- 7.8 tWTR Exit self-refresh to non-read command tXSNR Exit self-refresh to read command tXSRD Average Periodic Refresh Interval tREFI tCK ns 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)12) tCK s 1) 0 C TA 70 C; VDDQ = 2.5 V 0.2 V, VDD = +2.5 V 0.2 V (DDR333); VDDQ = 2.6 V 0.1 V, VDD = +2.6 V 0.1 V (DDR400) 2) Input slew rate 1 V/ns for DDR400, DDR333 3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns. 4) Inputs are not recognized as valid until VREF stabilizes. 5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT. 6) These parameters guarantee device timing, but they are not necessarily tested on each device. 7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ). 8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. Data Sheet 17 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Electrical Characteristics 9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ ns, measured between VOH(ac) and VOL(ac). 11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. 12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device. Data Sheet 18 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules SPD Contents 4 Table 11 SPD Contents SPD Codes for HYS64D64020HDL-[5/6]-B HYS64D64020HDL-6-B HYS64D64020HDL-5-B 512MB x64 2 Ranks -5 PC2100S-2033-0-A1 -5 HEX Part Number & Organization 512MB x64 2 Ranks -6 PC2700S-2533-0-A1 -6 HEX 80 08 07 0D 0A 02 40 00 04 60 70 00 82 10 00 01 0E 04 0C 01 02 20 C1 75 70 00 19 Label Code Jedec SPD Revision Byte# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Data Sheet Description Programmed SPD Bytes in E2PROM Total number of Bytes in E2PROM Memory Type DDR-I = 07h # of Row Addresses # Number of Column Addresses # of DIMM Banks Data Width (LSB) Data Width (MSB) Interface Voltage Levels tCK @ CLmax (Byte 18) [ns] tAC SDRAM @ CLmax (Byte 18) [ns] DIMM Configuration Type (non- / ECC) Refresh Rate Primary SDRAM width Error Checking SDRAM width tCCD [cycles] Burst Length Supported Number of Banks on SDRAM CAS Latency CS Latency WE (Write) Latency DIMM Attributes Component Attributes tCK @ CLmax -0.5 (Byte 18) [ns] tAC SDRAM @ CLmax -0.5 [ns] tCK @ CLmax -1 (Byte 18) [ns] Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules SPD Contents Table 11 SPD Codes for HYS64D64020HDL-[5/6]-B HYS64D64020HDL-6-B HYS64D64020HDL-5-B 512MB x64 2 Ranks -5 PC2100S-2033-0-A1 -5 HEX Part Number & Organization 512MB x64 2 Ranks -6 PC2700S-2533-0-A1 -6 HEX 00 48 30 48 2A 40 75 75 45 45 00 3C 48 30 2D 55 00 00 0A C1 00 00 00 00 00 00 00 Label Code Jedec SPD Revision Byte# 26 27 28 29 30 31 32 33 34 35 36 - 40 41 42 43 44 45 46 - 61 62 63 64 65 66 67 68 69 70 71 Description tAC SDRAM @ CLmax -1 [ns] tRPmin (ns) tRRDmin [ns] tRCDmin [ns] tRASmin [ns] Module Density per Bank tAS, tCS [ns] tAH, TCH [ns] tDS [ns] tDH [ns] not used tRCmin [ns] tRFCmin [ns] tCKmax [ns] tDQSQmax [ns] tQHSmax [ns] not used SPD Revision Checksum of Byte 0-62 (LSB only) JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon JEDEC ID Code for Infineon Data Sheet 20 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules SPD Contents Table 11 SPD Codes for HYS64D64020HDL-[5/6]-B HYS64D64020HDL-6-B HYS64D64020HDL-5-B 512MB x64 2 Ranks -5 PC2100S-2033-0-A1 -5 HEX Part Number & Organization 512MB x64 2 Ranks -6 PC2700S-2533-0-A1 -6 HEX xx 36 34 44 36 34 30 32 30 48 44 4C 36 42 20 20 20 20 20 xx xx xx xx xx 00 Label Code Jedec SPD Revision Byte# 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 - 98 99 - 127 Description Module Manufacturer Location Part Number, Char 1 Part Number, Char 2 Part Number, Char 3 Part Number, Char 4 Part Number, Char 5 Part Number, Char 6 Part Number, Char 7 Part Number, Char 8 Part Number, Char 9 Part Number, Char 10 Part Number, Char 11 Part Number, Char 12 Part Number, Char 13 Part Number, Char 14 Part Number, Char 15 Part Number, Char 16 Part Number, Char 17 Part Number, Char 18 Module Revision Code Test Program Revision Code Module Manufacturing Date Year Module Manufacturing Date Week Module Serial Number not used Data Sheet 21 Rev. 0.5, 2003-12 HYS64D64020HDL-[5/6]-B Small Outline DDR SDRAM Modules Package Outlines 5 Package Outlines 67.6 63.6 0.1 3.8 MAX. 1.8 0.05 (2.15) 4 0.1 1 18.45 0.1 1.8 0.1 (2.4) (2.45) 100 31.75 10.1 0.15 11.4 0.1 47.4 0.1 (2.7) (2.45) 1.5 0.1 10.1 101 200 (2.15) 4 0.1 6 0.1 20 0.1 2 MIN. Detail of contacts 0.25 -0.18 0.45 0.03 0.6 0.1 Burnished, no burr allowed L-DIM-200-006 Figure 3 Package Outlines - Raw Card A DDR-SDRAM SO-DIMM HYS64D64020HDL-[5/6]-B Data Sheet 2.55 22 Rev. 0.5, 2003-12 www.infineon.com Published by Infineon Technologies AG |
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